{"id":2442,"date":"2007-02-27T15:57:16","date_gmt":"2007-02-27T15:57:16","guid":{"rendered":"https:\/\/www.oec-gmbh.de\/products\/photodiodes-detectors-sensors\/si\/"},"modified":"2007-02-27T15:57:16","modified_gmt":"2007-02-27T15:57:16","slug":"si","status":"publish","type":"page","link":"https:\/\/www.oec-gmbh.de\/en\/products\/photodiodes-detectors-sensors\/si\/","title":{"rendered":"Si"},"content":{"rendered":"<p><a href=\"\/wp-content\/uploads\/2007\/02\/si-componenten.jpg\" data-rel=\"lightbox-image-0\" data-rl_title=\"\" data-rl_caption=\"\" title=\"\"><img loading=\"lazy\" decoding=\"async\" class=\"alignleft size-full wp-image-786\" src=\"\/wp-content\/uploads\/2007\/02\/si-componenten.jpg\" alt=\"si-components\" width=\"214\" height=\"145\"><\/a>Using silicon as the semiconductor base for photodiodes, wavelengths between 190 and 1100 nm can be detected. Through the internal photoelectric effect, electrons are released as charge carriers, with the uneven charge distribution caused by the PN junction leading to a potential difference between the terminals (anode and cathode). The resulting photocurrent is proportional over a wide range of the receiver area and illumination intensity.  <\/p>\n<p>Take advantage of our extensive expertise for custom solutions. Use the inquiry form or give us a call.  <strong>We are happy to advise you!<\/strong><\/p>\n<p><strong>Photodiodes are used in:<\/strong><\/p>\n<ul>\n<li>Spectroscopy<\/li>\n<li>Photography<\/li>\n<li>Analytical measurement technology<\/li>\n<li>Optical positioning<\/li>\n<li>Surface analysis<\/li>\n<li>Communication technology<\/li>\n<li>Medical technology<\/li>\n<\/ul>\n<p><strong>Product overview:<\/strong><\/p>\n<table cellspacing=\"0\" cellpadding=\"2\">\n<tbody>\n<tr>\n<td align=\"left\" valign=\"top\" width=\"15%\"><span class=\"OEC-Produkt-Fett\">PV mode<br \/>\nPC mode<br \/>\nUV<br \/>\nVIS<br \/>\nNIR<\/span><\/td>\n<td align=\"left\" valign=\"top\" width=\"15%\"><span class=\"OEC-Produkt-Fett\">X-Ray<br \/>\nPIN<br \/>\nPN<br \/>\nFiber optics<br \/>\nAMP<\/span><\/td>\n<td width=\"15%\"><span class=\"OEC-Produkt-Fett\">Sandwiches<br \/>\nDuals &amp; Quadrants<br \/>\nArrays<br \/>\nPSDs<br \/>\nSolderable chips<\/span><\/td>\n<td width=\"15%\"><span class=\"OEC-Produkt-Fett\">High speed<br \/>\nLow noice<br \/>\nStandards<br \/>\nCustom design<br \/>\nAPDs<\/span><\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n","protected":false},"excerpt":{"rendered":"<p>Using silicon as the semiconductor base for photodiodes, wavelengths between 190 and 1100 nm can be detected. Through the internal photoelectric effect, electrons are released as charge carriers, with the uneven charge distribution caused by the PN junction leading to a potential difference between the terminals (anode and cathode). The resulting photocurrent is proportional over&hellip;<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":2226,"menu_order":2,"comment_status":"open","ping_status":"closed","template":"page-products.php","meta":{"footnotes":""},"class_list":["post-2442","page","type-page","status-publish","hentry","entry","no-media"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v24.4 - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>Si - OEC GmbH - Optoelektronische Komponenten &amp; Bauteile<\/title>\n<meta name=\"description\" content=\"Optoelektronische Komponenten, Module und Systeme: GaN, InGaAs, Si, Laserdiodenmodule, Optikkomponenten, Photoempf\u00e4nger und mehr.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.oec-gmbh.de\/en\/products\/photodiodes-detectors-sensors\/si\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Si - OEC GmbH - Optoelektronische Komponenten &amp; 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