{"id":2452,"date":"2008-02-12T13:41:40","date_gmt":"2008-02-12T13:41:40","guid":{"rendered":"https:\/\/www.oec-gmbh.de\/products\/photodiodes-detectors-sensors\/si\/photoconductive-series\/"},"modified":"2008-02-12T13:41:40","modified_gmt":"2008-02-12T13:41:40","slug":"photoconductive-series","status":"publish","type":"page","link":"https:\/\/www.oec-gmbh.de\/en\/products\/photodiodes-detectors-sensors\/si\/photoconductive-series\/","title":{"rendered":"Photoconductive series"},"content":{"rendered":"\n\n\n
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Photoconductive series
\nPlanar silicon photodiodes<\/strong><\/div>\n<\/td>\n
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\"photoconductive\"<\/a>The series of photoconductive detectors are suitable for high-speed applications and applications requiring high sensitivity. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for applications in the visible and near-IR range, including AC applications such as detection of pulsed laser sources, LEDs, or chopped light. To achieve high speeds, these detectors should be operated with reverse bias. Typical rise times of 10 ns to 250 ns can, for example, be achieved with a 10 V reverse bias. When reverse bias is applied, the capacitance decreases (as shown in the figure below) in direct proportion to an increase in speed. As indicated in the specification table, the reverse bias should not exceed 30 volts. Higher bias voltages will permanently damage the detector. Since reverse bias also generates additional dark current, the noise in the detector increases as well. For lower-noise detectors, the photovoltaic series should be considered. Please refer to the \u201cPhotoconductive Types (PC)\u201d section in \u201cPhotodiode Characteristics\u201d of this catalog for detailed information on the electronic configuration. <\/p>\n

Features<\/strong><\/p>\n