| 800 nm to 1700 nm 1mm active area |
| InGaAs Quadrant Photodiode IGA1000Q-IT |
Our Indium Gallium Arsenide (InGaAs) quadrant photodiodes are designed to meet the highest requirements for industrial and precision applications.
Optimized for the spectral range from 800 nm to 1700 nm, they are ideally suited for near-infrared (NIR) applications. Thanks to the outstanding material properties of InGaAs, these photodiodes provide a fast, low-noise alternative to conventional germanium detectors.
The quadrant photodiode presented here features a 1 mm active diameter and is characterized by exceptionally low dark current and excellent linearity.
Its integrated P-on-N structure with finely patterned 20 µm gap widths enables highly accurate beam position detection while minimizing optical crosstalk.
The device is housed in a robust TO-5 package with a hermetically sealed, ultra-flat fused silica window, ensuring outstanding reliability even under demanding environmental conditions.
Key Features
- 1 mm active diameter
- High linearity
- Low dark current
- Low crosstalk
- High reliability
- Planar structure on an MN+ InP substrate
- Four top anode contacts for precise signal evaluation
Typical Applications
- Laser beam position sensors
- Optical tweezers
- Laser guidance and beam steering
- Temperature measurement
- Process monitoring
- Precision measurement and control systems