Our Indium Gallium Arsenide (InGaAs) quadrant photodiodes meet the highest standards for industrial and precision applications.
They are specifically optimized for the spectral range from 800 nm to 1700 nm and are ideally suited for near-infrared applications.
Thanks to their excellent material properties, InGaAs photodiodes provide a low-noise and high-speed alternative to germanium detectors.
The quadrant photodiode presented here features an active area with a diameter of 1 mm and is characterized by exceptionally low dark current and high linearity.
The integrated p-on-n structure with finely structured 20 µm gaps enables precise beam position detection with minimal crosstalk.
The device is housed in a robust TO-5 package with a hermetically sealed, ultra-flat fused silica window, ensuring maximum reliability even under demanding environmental conditions.
Key Features
- 1 mm active area
- High linearity
- Low dark current
- Low crosstalk
- High reliability
- Planar structure on MN+ InP substrate
- Four top anode contacts for precise signal evaluation
Typical Applications
- Laser beam position sensors
- Optical tweezers
- Laser guidance and beam control
- Temperature measurement technology
- Process monitoring
- Precision measurement and control systems