| Segmented photodiodes |
| Silizium Photodioden mit Inversionsschicht |
The X-UV detector series offered and awarded by OEC is a unique class of silicon photodiodes designed for enhanced sensitivity in the X-ray region of the electromagnetic spectrum without the use of scintillator crystals or screens. Over a wide sensitivity range from 200 nm to 0.07 nm (6 eV to 17,600 eV), one electron pair is generated per 3.63 eV of incident energy, corresponding to extremely high and stable quantum efficiency, as predicted by Eph/3.63 eV (see graph below). For measurements of radiation energy above 17.6 keV, please refer to the chapter “fully depleted high-speed detectors and high-radiation-energy detectors.” A reverse bias may be applied to reduce capacitance and rise time. When operated without reverse bias, these detectors can be used for applications requiring low noise and low drift. These detectors are also an excellent choice for detecting light wavelengths from 350 to 1100 nm. The detectors can be coupled to a charge-sensitive preamplifier or a low-noise operational amplifier.
Features
- Direct detection
- No bias voltage necessary
- High quantum efficiency
- Low noise
- High vacuum compatible
- Cryogenic capable
- 0.070 nm to 1100 nm wavelength range
Applications
- Electron detection
- Medical measuring devices
- Dosimetry
- Radiation monitoring
- X-ray spectroscopy
- Charged particle detection