Our germanium photodiodes meet the most demanding requirements in military and industrial applications. Ge photodiodes are sensitive in the range of 800 nm to 1800 nm. They offer an alternative to InGaAs photodiodes (800 nm – 1700 nm).
The advantages of Ge photodiodes lie in their spectral range (up to 1800 nm), their linear sensitivity at higher irradiation levels, and their significantly lower cost as the active area increases.
We offer PN and PIN Ge photodiodes mounted on ceramic substrates, in TO packages with or without TE coolers, or in LN2 dewars.
| Main features |
Typical applications |
|
| 800nm – 1800nm Small to very large active areas Operation with or without cooling |
Laser power measurement Spectroscopy Measurement and control technology Process measurement technology Temperature measurement technology Applications requiring inexpensive, large-area sensors |