Our Indium Gallium Arsenide (InGaAs) Photodiodes meet the most demanding requirements in military and industrial applications.
InGaAs photodiodes are sensitive in the spectral range from 800 nm to 2600 nm. They provide an alternative to germanium (Ge) photodiodes (800 nm – 1800 nm). The advantages of InGaAs photodiodes lie in their low noise performance and achievable bandwidths. We offer InGaAs photodiodes on ceramic carriers, in TO packages with and without thermoelectric cooling, as well as in LCC packages.
Main features
- High sensitivity
- High shunt resistances
- Low noise
- Low capacitance
- High reliability
Typical applications
- IR sensing
- Spectroscopy
- Optical communication
- Short-range DataCom / TeleCom receivers
- Measurement and control technology
- Process measurement technology
- Temperature measurement technology