Our extended indium-gallium-arsenide (InGaAs) photodiodes meet the most demanding requirements in MIL and industrial applications. Extended InGaAs photodiodes are sensitive in the 800 nm to 2700 nm range.
For the extended wavelength range beyond 1.7 / 1.8 µm, extended InGaAs photodiodes provide a good alternative to InAs and InSb photodiodes or PbS photoconductors.
Due to the technology used, the shunt resistances are lower than those of Ge and/or standard InGaAs photodiodes, but still significantly higher than those of InAs photodiodes, which typically have only a few ohms.
Compared to InSb, the advantage is that no liquid nitrogen cooling is required. Compared to PbS photoconductive detectors, extended InGaAs offer the benefits of low aging and continuous-wave (CW) signal processing, meaning that a mechanical chopper is not needed.
The preferred operation of extended InGaAs photodiodes is thermally stabilized using TE1 and/or TE2, offering an attractive technical and commercial compromise.
The advantages of extended InGaAs photodiodes lie in their low noise and achievable bandwidths. We offer extended InGaAs photodiodes on ceramic carriers, in TO packages, with or without TE cooling.
Characteristics
- 1000 nm – 2000…2500nm
- Operation without chopper
- High bandwidths
- High reliability
Applications
- Process measurement technology
- Spectroscopy
- Optical power measurement
- Temperature measurement technology
- Medical analysis
- Measurement and control technology